डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CET04N10 | N-Channel MOSFET CET04N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. L |
Chino-Excel Technology |
|
CET04N10 | N-Channel MOSFET | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |