CEP18N5 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor CEP18N5 FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100% aval

CEP18N5/CEB18N5 CEF18N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP18N5 CEB18N5 CEF18N5 VDSS 500V 500V 500V RDS(ON) 0.27Ω 0.27Ω 0.27Ω ID 18A 18A 18A d @VGS 10