डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEP16N10 | N-Channel MOSFET CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing c |
CET |
|
CEP16N10L | N-Channel MOSFET CEP16N10L/CEB16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely |
CET |
www.DataSheet.in | 2017 | संपर्क |