डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEH2316 | N-Channel Enhancement Mode Field Effect Transistor CEH2316
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Le |
CET |
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CEH2310 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2312 | N-Channel MOSFET | CET |
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CEH2313 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2311 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2316 | N-Channel Enhancement Mode Field Effect Transistor | CET |
www.DataSheet.in | 2017 | संपर्क |