डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEFF630 | N-Channel Enhancement Mode Field Effect Transistor CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Chino-Excel Technology |
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CEFF630B | N-Channel MOSFET CEPF630B/CEBF630B CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEPF630B CEBF630B CEIF630B CEFF630B VDSS 200V 200V 200V 200V RDS(ON) 0.4Ω 0.4Ω 0.4Ω 0.4Ω ID 9A 9A 9A |
CET |
www.DataSheet.in | 2017 | संपर्क |