CEF02N6 डाटा शीट PDF( Datasheet )

CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current ha

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02

CEP02N65D/CEB02N65D CEF02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N65D CEB02N65D CEF02N65D VDSS 650V 650V 650V RDS(ON) 6.9Ω 6.9Ω 6.9Ω ID @VGS 2A 10V 2

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF02N65G VDSS 650V 650V 650V RDS(ON) 5.5Ω 5.5Ω 5.5Ω ID @VGS 2A 10V 2A 10V 2A d 10V

CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6G CEB02N6G CEF02N6G VDSS 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω ID 2.2A 2.2A 2.2A d @VGS 10V 10V 10V Supe