डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEDF630 | N-Channel MOSFET CEDF630/CEUF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capa |
Chino-Excel Technology |
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CEDF630 | N-Channel MOSFET | Chino-Excel Technology |
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CEDF634 | N-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |