डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEC8218 | Dual N-Channel MOSFET CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 28mΩ @VGS = 2.5V. RDS(ON) = 48mΩ @VGS = 1.8V.
Super High dense cell design for extr |
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CEC8218 | Dual N-Channel MOSFET | ![]() CET |
www.DataSheet.in | 2017 | संपर्क |