डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEC3P07 | P-Channel MOSFET CEC3P07
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -37A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V.
Super High dense cell design for extremely low RDS(ON) |
CET |
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CEC3P07 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |