डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEB35P03 | P-Channel MOSFET CEP35P03/CEB35P03
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON). High po |
CET |
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CEB35P03 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |