डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEB3120 | N-Channel MOSFET CEP3120/CEB3120
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power |
CET |
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CEB3120 | N-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |