C536 डाटा शीट PDF( Datasheet )

2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operatin

2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5360 Color TV Chroma Output Applications 2SC5360 Unit: mm • High voltage: VCEO = 300 V • Small collector output capacitance: Cob = 5.0 pF (typ.) •

2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • • • High speed: tr = 0.5