डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C5201 | 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (ma |
Toshiba |
|
C5200 | Silicon NPN Transistor | Toshiba |
|
C5207A | Silicon NPN Transistor | Hitachi Semiconductor |
|
C5201 | 2SC5201 | Toshiba |
|
C5200N | NPN Transistor | Toshiba |
|
C5206 | Silicon NPN Transistor | Hitachi |
|
C520A | 2SC520A | ETC |
www.DataSheet.in | 2017 | संपर्क |