| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SC5070 |
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Toshiba |
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
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Sanyo Semicon Device |
NPN TRANSISTOR · High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. Package Dimensions unit:mm 2084A [2SC5070] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specificat |
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