डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C503 | 2SC503 www.DataSheet4U.com
www.datasheet4u.com
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Toshiba Semiconductor |
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C5030 | 2SC5030 2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = |
Toshiba Semiconductor |
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C5032 | 2SC5032 Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area |
Panasonic |
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C5034 | Silicon NPN Transistor Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
9.9±0.3 φ3.2±0.1
2.9±0.2
q High collector to emitter VC |
Panasonic |
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C5036 | 2SC5036 Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area |
Panasonic Semiconductor |
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C5036 | 50A AVALANCHE AUTOMOTIVE CELL DIODE ®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode |
Won-Top Electronics |
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C5038 | Silicon NPN Transistor C5038
Silicon NPN transistor epitaxial type C5038
[ Applications ] High-frequency amplification Oscillation Mixing
[ Feature ] High transition frequency fT= 650MHz(min.) Low output capacitance Cob= 0.7pF(typ |
ETC |
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