C4D30120D डाटा शीट PDF( Datasheet )

C4D30120D 4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet

C4D30120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 43 A 192 nC Qc = Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recove