C4D10120D डाटा शीट PDF( Datasheet )

C4D10120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM  =  1200 V IF (TC=135˚C) = 18 A** Qc  = 54 nC** • 1.2kV Schottky Rectifier • Ze

C4D10120D 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet