C3M0065090J डाटा शीट PDF( Datasheet )

C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Carbide (SiC) MOSFET technology • New low impedance package

C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • New low impe