| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Jiangsu Changjiang Electronics Technology |
NPN Transistor Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and |
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Toshiba Semiconductor |
Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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JCET |
NPN Transistor Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation RθJA Tj Tstg |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC= 100mA ; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10mA ICBO Emitter Cutoff Current VCB= 60V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE(1) DC Current Gain IC= 2mA ; VCE= 6V hFE(2) DC Curren |
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SeCoS |
NPN Transistor Power Dissipation MARKING: HF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltag |
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UTC |
NPN SILICON TRANSISTOR * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC1815L-xx-T92-B 2SC1815G-xx-T92-B 2SC1815L-xx-T |
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SeCoS |
NPN Transistor . Power Dissipation PCM: 0.2 W ( Ta = 25 к ) A B C A L 3 1 3 . Collector Current ICM: 0.15 A D G H B S 2 . Collector-Base Voltage V(BR)CBO: 60 V 1 2 Top View J K L S V G C D H K J 1.BASE 2.EMITTER 3.COLLECTOR V All Dimension in mm ƔABSOLU |
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UTC |
NPN SILICON TRANSISTOR * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC1815L-xx-T92-B 2SC1815G-xx-T92-B 2SC1815L-xx-T |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA RS=10kΩ, f=1Hz Min. 70 25 80 Typ. 0.1 2.0 1.0 Max. 0.1 0.1 700 Units µA µA 0.25 V 1.0 V MHz 3.0 pF 1.0 dB hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 L 350 |
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ON Semiconductor |
NPN Epitaxial Silicon Transistor • Audio Frequency Amplifier and High−Frequency OSC • Complement to KSA1015 • Collector−Base Voltage: VCBO = 50 V • This is a Pb−Free Device MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collec |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor , IE=0, f=1MHz VCE=6V, IC=0.1mA RS=10kΩ, f=1Hz 80 2.0 1.0 3.0 1.0 70 25 0.1 Min. Typ. Max. 0.1 0.1 700 0.25 1.0 V V MHz pF dB Units µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 L 350 ~ 700 ©2002 Fairchild Semicon |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor O C C at VCE=6V, IC=150mA Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1mA Output Capacitance at VCB=10V, f=1MHz |
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Central Semiconductor |
SILICON NPN TRANSISTORS 70 hFE VCE=6.0V, IC=2.0mA (2SC1815-Y) 120 hFE VCE=6.0V, IC=2.0mA (2SC1815-GR) 200 hFE VCE=6.0V, IC=2.0mA (2SC1815-BL) 350 fT VCE=10V, IC=1.0mA, f=30MHz 80 MAX 100 100 100 0.25 1.0 1.45 700 140 240 400 700 UNITS V V V mA mW °C °C/W UNITS nA n |
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Toshiba Semiconductor |
Silicon NPN TRANSISTOR -off current DC current gain Collector-emitter Saturation voltage Base-emitter Transition frequency Collector output capacitance Base intrinsic resistance Noise figure ICBO VCB = 60 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (1) VCE = 6 V, IC = 2 mA ( |
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Comchip Technology |
NPN Transistor -Power dissipation P CM =0.2W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marking: HF Collector 3 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70) 2 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 1 Base 0.020(0.50) 0.013(0.35) 0 |
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Central Semiconductor |
SILICON NPN TRANSISTORS 70 hFE VCE=6.0V, IC=2.0mA (2SC1815-Y) 120 hFE VCE=6.0V, IC=2.0mA (2SC1815-GR) 200 hFE VCE=6.0V, IC=2.0mA (2SC1815-BL) 350 fT VCE=10V, IC=1.0mA, f=30MHz 80 MAX 100 100 100 0.25 1.0 1.45 700 140 240 400 700 UNITS V V V mA mW °C °C/W UNITS nA n |
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MCC |
NPN Transistor • • • • • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Marking : C1815 x • • • Epoxy meets U |
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SeCoS |
NPN Transistor Power Dissipation CLASSIFICATION OF hFE (1) Product-Rank C1815T-O C1815T-Y Range 70~140 120~240 C1815T-GR 200~400 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 |
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Micrel Semiconductor |
Microprocessor Reset Circuit • Precision voltage monitor for 10% or 20% drop in 3.3V power supplies • /RESET remains valid with VCC as low as 1V • 5µA supply current • 100ms minimum reset pulse width • No external components required • Available in 3-pin SOT-23 package Applicati |
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