डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ30A | Power Transistor BUZ 30A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 30A
VDS
200 V
ID
21 A
RDS(on)
0.13 Ω
Package TO-220 AB
Ordering Code C6707 |
Siemens Semiconductor Group |
|
BUZ30A | Power Transistor BUZ 30A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 30A
200 V
21 A
0.13 Ω
TO-220 |
Infineon Technologies AG |
|
BUZ30A | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot varia |
INCHANGE |
|
BUZ30AH | Power Transistor SIPMOS ® Power Transistor
BUZ 30A H
• N channel • Enhancement mode • Avalanche-rated
. Halogen-free according to IEC61249-2--21
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 30A H
VDS 200 V
ID 21 A
RDS(on)
|
Infineon |
|
BUZ30AH | N-Channel MOSFET isc N-Channel MOSFET Transistor
BUZ30AH,IBUZ30AH
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤130mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
|
BUZ30AH3045A | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
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