डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ11 | N-CHANNEL MOSFET ®
BUZ11
N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET
T YPE BUZ 11
s s s s s
V DSS 50 V
R DS(o n) < 0.04 Ω
ID 33 A
TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TEST |
STMicroelectronics |
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BUZ11 | Power Transistor BUZ 11
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 11
VDS
50 V
ID
30 A
RDS(on)
0.04 Ω
Package TO-220 AB
Ord |
Siemens Semiconductor Group |
|
BUZ11 | N-Channel Power MOSFET BUZ11
Data Sheet June 1999 File Number 2253.2
30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as swi |
Intersil Corporation |
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BUZ11 | N-Channel Power MOSFET Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as |
ON Semiconductor |
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BUZ11 | N-Channel Power MOSFET Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as |
Fairchild Semiconductor |
|
BUZ11 | N-Channel MOSFET isc N-Channel Mosfet Transistor
BUZ11
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-L |
INCHANGE |
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BUZ110S | Power Transistor BUZ 110 S
SPP80N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Typ |
Siemens Semiconductor Group |
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