BM23 डाटा शीट PDF( Datasheet )

BM20/BM23 Bluetooth® 4.1 Stereo Audio Module Features:  Complete, Fully Certified, Embedded 2.4 GHz Bluetooth® Version 4.1 Module  Bluetooth Classic (BDR/EDR)  Bluetooth SIG Certified  Onboard e

BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high

P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.130 @ VGS = –4.5 V –20 0.190 @ VGS = –2.5 V ID (A) –2.3 –1.9 TO-236 (SOT-23) G1 S2 3D Top View Si2301DS (A1)* *Marking Cod

N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.085 @ VGS = 4.5 V 20 0.115 @ VGS = 2.5 V ID (A) 2.8 2.4 TO-236 (SOT-23) G1 S2 3D Top View BM2302 ABSOLUTE MAXIMUM RATINGS (TA = 25

M Series 50 Watt DC-DC Converters Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltage LGA • Rugged electrical and mechanical design • O

BM2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This