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BLD137D DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BLD137DL

INCHANGE
NPN Transistor
otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCBO Collector-Base Voltage IC= 1mA; IE= 0 VEBO Emitter-Base Voltage IE= 1mA; IC= 0 VCE(sat)1 Collector-Emitter Saturation Volt
Datasheet
2
BLD137D

Shenzhen SI Semiconductors
BLD SERIES TRANSISTORS

■HIGH VOLTAGE CAPABILITY
■HIGH SPEED SWITCHING
■WIDE SOA
■RoHS COMPLIANT
●:
●APPLICATION:
■FLUORESCENT LAMP
■ELECTRONIC BALLAST
■ELECTRONIC TRANSFORMER
● ( (Tc=25°C)
● Absolute Maximum Ratings(Tc=25°C) PARAMETER Collector-Base Voltage Collector-E
Datasheet



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