डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL8N65F | N-Channel Power Mosfet Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
RDS(ON) =1.4Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 28nC)
Lead-free
Low reverse transfer capacitan |
GME |
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BL8N65F | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |