डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL2308 | N-Channel Power Mosfet Production specification
N-Channel 60V(D-S) MOSFET
FEATURES
RDS(ON)≤270mΩ@VGS=10V.
Pb
RDS(ON)≤340mΩ@VGS=4.5V.
Lead-free
Super high density cell design for extremely low RDS(ON).
Ex |
GME |
|
BL2303 | P-Channel Power Mosfet | GME |
|
BL2305 | P-Channel Power Mosfet | GME |
|
BL2301 | P-Channel Enhancement Mode Field Effect Transistor | GME |
|
BL2302 | N-Channel Enhancement Mode Field Effect Transistor | GME |
|
BL2300 | N-Channel Power Mosfet | GME |
|
BL2304 | N-Channel Power Mosfet | GME |
|
BL2308 | N-Channel Power Mosfet | GME |
|
BL2306 | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |