डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL1N60F | N-Channel Power MOSFET Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
RDS(ON) =9.3Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 5.0nC)
Lead-free
Low reverse transfer capacita |
GME |
|
BL1N60F | N-Channel Power MOSFET | GME |
|
BL1N60 | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |