डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL10N30F | N-Channel Power MOSFET Production specification
N-Channel Power MOSFET
BL10N30F
FEATURES
High switching speed. RDS(ON)=0.65Ω @ VGS=10V. 100% avalanche tested. Very Good Manufacturing Reliabilty.
Pb
Lead-free
AP |
GME |
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BL10N30 | N-Channel Power Mosfet | GME |
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BL10N30F | N-Channel Power MOSFET | GME |
www.DataSheet.in | 2017 | संपर्क |