BFR92A डाटा शीट PDF( Datasheet )

isc Silicon NPN RF Transistor INCHANGE Semiconductor BFR92A DESCRIPTION ·Low Noise and High Gain NF = 1.3 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain ︱S21e︱2 = 11.5 dB TYP. @VCE = 10 V,

NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR92A FEATURES • High power gain • Low noise figure • Low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and

BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High p

BFR92A NPN WIDEBAND TRANSISTOR Features · · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise B E D G H K J L M SOT-23 A C TOP VIEW

SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package (SOT23 Compatible) • Suitable For UHF Applications Up To 1.0GHz • Space Le

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFR92ALT1/D The RF Line NPN Silicon High-Frequency Transistors Designed primarily for use in high–gain, low–noise, small–signal UHF and mic

BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High p