डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFR19 | NPN Transistor |
SGS-ATES |
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BFR193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) BFR 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observ |
Siemens Semiconductor Group |
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BFR193 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Q |
Infineon Technologies AG |
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BFR193F | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-f |
Infineon |
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BFR193L3 | NPN Bipolar RF Transistor NPN Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification r |
Infineon |
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BFR193T | Silicon NPN Planar RF Transistor BFR193T/BFR193TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power ampli |
Vishay Telefunken |
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BFR193T | NPN Silicon RF Transistor BFR193T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
3
F = 1.3 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic di |
Infineon Technologies AG |
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