डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFR18 | NPN Transistor |
SGS-ATES |
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BFR180 | NPN Silicon RF Transistor BFR 180
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz
ESD: Electrostatic discharge s |
Siemens Semiconductor Group |
|
BFR180 | NPN Silicon RF Transistor BFR180
NPN Silicon RF Transistor
For low-power amplifiers in mobile
3
communication systems (pager) at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
2 1
VPS05161
ESD: Electr |
Infineon Technologies AG |
|
BFR180W | NPN Silicon RF Transistor BFR 180W
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz
ESD: Electrostatic discharge |
Siemens Semiconductor Group |
|
BFR180W | NPN Silicon RF Transistor BFR180W
NPN Silicon RF Transistor
For low-power amplifiers in mobile
3
communication systems (pager) at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
2 1
VSO05561
ESD: Elect |
Infineon Technologies AG |
|
BFR181 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) BFR 181
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, |
Siemens Semiconductor Group |
|
BFR181 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) packag |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |