डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BF998 | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode
• Short-channel transistor with high S / C quality factor
• For low-noise, gain-controlled input stage up to 1 GHz
• Pb-free (RoHS compliant) package
BF998...
ESD (Elect |
Infineon |
|
BF998 | Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
|
NXP |
|
BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input and mixer stages in UH |
Vishay Telefunken |
|
BF998 | Silicon N-Channel MOSFET Tetrode Silicon N Channel MOSFET Tetrode
BF 998
Features
q q
Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz
Type BF 998
Marking MO
Ordering Code (tap |
Siemens Semiconductor Group |
|
BF998R | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode
• Short-channel transistor with high S / C quality factor
• For low-noise, gain-controlled input stage up to 1 GHz
• Pb-free (RoHS compliant) package
BF998...
ESD (Elect |
Infineon |
|
BF998R | Silicon N-Channel MOSFET Tetrode BF 998R Silicon N-Channel MOSFET Tetrode
• Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998
ESD: Electrostatic |
Siemens Semiconductor Group |
|
BF998R | Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
|
NXP |
www.DataSheet.in | 2017 | संपर्क |