डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BF543 | Silicon N Channel MOS FET Triode Silicon N Channel MOS FET Triode
Preliminary Data
q q
BF 543
For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS
ESD: Electrostatic discharge sensitive device, observe handling |
Siemens Semiconductor Group |
|
BF543 | Silicon N-Channel MOSFET Triode BF543
Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz
3
preferably in FM applications
IDSS = 4mA, g fs = 12mS
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |