BF245A डाटा शीट PDF( Datasheet )

NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C FEATURES  Interchangeability of drain and source connections  Frequencies up to 700 MHz. APPLIC

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92 1. Gate 2. Source 3. Drain Absolute Maximum Ratings T

^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 BF 245 A (973

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current To

n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Drain·Gate Voltage ............................. 30 V Drain-Source Voltage ..........

BF244,A,B,C CASE 29-02, STYLE 22 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current @Total Device Dissipation Ta = 25°C Dera