BDY26C डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BDY26C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed

BDY26C MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) HIGH CURRENT NPN SILICON TRANSISTOR FEATURES • • • �