BDX88 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| BDX88 | Bipolar PNP Device BDX88
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1 |
 Seme LAB |
|
| BDX88 | Power Darlingtons |
 STMicroelectronics |
|
| BDX88 | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A - |
 Inchange Semiconductor |
|
| BDX88A | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A - |
Inchange Semiconductor |
|
| BDX88A | Power Darlingtons |
STMicroelectronics |
|
| BDX88B | Bipolar PNP Device BDX88B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 ( |
Seme LAB |
|
| BDX88B | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A - |
Inchange Semiconductor |
शेयर लिंक :
[1] [2]
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