डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDX63C | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 BDX63A BDX63B BDX63C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in m |
Seme LAB |
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BDX63C | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust dev |
Inchange Semiconductor |
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BDX63C | NPN SILICON DARLINGTONS BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switchi |
Comset Semiconductors |
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