BDX20 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device p

BDX20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

PNP BDX20 SILICON TRANSISTORS EPITAXIAL BASE The BDX20 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection Compliance to RoHS. ABSOLUTE