No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Seme LAB |
Bipolar NPN Device nd package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab p |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ollector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC curre |
|
|
|
INCHANGE |
NPN Transistor ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDW51/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW51 CONDITIONS MIN TYP. MAX UNIT 45 VCEO( |
|