डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDV66B | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
BDV66/A/B/C
DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·M |
Inchange Semiconductor |
|
BDV66B | PNP Darlington Power Transistor BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. co |
Comset Semiconductors |
www.DataSheet.in | 2017 | संपर्क |