BDT86 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT

      PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER TRANSISTORS The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audi

isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min