BDT83 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85;

      NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audi

isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- B