डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDT63B | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust de |
Inchange Semiconductor |
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BDT63B | Silicon Darlington Power Transistor SEMICONDUCTORS
BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio e |
Comset Semiconductors |
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BDT63BF | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63F/A/B/C
DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement t |
INCHANGE |
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