डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD950 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
BD950
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949 ·Minimum Lot-to-Lot va |
Inchange Semiconductor |
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BD950 | PNP PLASTIC POWER TRANSISTOR Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100
BD949, BD951, BD953, BD955 BD950, B |
CDIL |
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BD950F | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
BD950F/952F/954F/956F
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F ·Minimum Lot-to-Lot variations for robust device
pe |
Inchange Semiconductor |
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