BD896 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Co

isc Silicon PNP Darlington Power Transistor BD896 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC=

SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for

Single-chip Type with Built-in FET Switching Regulators Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8960NV No.10027EBT21 ●Description ROHM’s high efficiency step-d

Datasheet 4.5V to 5.5V, 2.0A 1ch Synchronous Buck Converter with Integrated FET BD8961NV General Description The BD8961NV is ROHM's high efficiency step-down switching regulator designed to produce a voltage

Datasheet 2.7V to 5.5V, 3A 1ch Synchronous Buck Converter with Integrated FET BD8962MUV General Description The BD8962MUV is ROHM's high efficiency step-down switching regulator designed to produce a voltage

Datasheet 2.7V to 5.5V, 2A 1ch Synchronous Buck Converter integrated FET BD89630EFJ ●General Description ROHM’s high efficiency step-down switching regulator BD89630EFJ is a power supply designed to produ