डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD678AG | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD678AG
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60V ·DC Current Gain—
: hFE = 750(M |
Inchange Semiconductor |
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BD678AG | PNP Transistor BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
Plastic Medium-Power Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington transistors can be used as output d |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |