डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD647 | NPN SILICON POWER DARLINGTONS www.DataSheet4U.com
BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
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Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous |
Bourns Electronic Solutions |
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BD647 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in |
SavantIC |
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BD647 | SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended f |
Comset Semiconductors |
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BD647 | NPN Transistor isc Silicon NPN Darlington Power Transistor
BD647
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement t |
INCHANGE |
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BD647F | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD647F
DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD648F ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
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