BD540 डाटा शीट PDF( Datasheet )

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD539 Series 45 W at 25°C

isc Silicon PNP Power Transistor BD540 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Complement to Type BD539 ·Minimum Lot-to-Lot

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD539 Series 45 W at 25°C

isc Silicon PNP Power Transistor BD540A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Complement to Type BD539A ·Minimum Lot-to-Lo

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD539 Series 45 W at 25°C

isc Silicon PNP Power Transistor BD540B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type BD539B ·Minimum Lot-to-Lo

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD539 Series 45 W at 25°C