BD242C डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- B

BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN tran

BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Rat

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Coll

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • High Current Gain − Bandwidt

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeter

BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Co