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BD241C | NPN Transistor isc Silicon NPN Power Transistor
BD241/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 10 |
INCHANGE |
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BD241C | Complementary Silicon Plastic Power Transistors BD241C (NPN), BD242B (PNP), BD242C (PNP)
Complementary Silicon Plastic Power Transistors
Designed for use in general purpose amplifier and switching applications.
Features
• High Current Gain − Bandwidt |
ON Semiconductor |
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BD241C | NPN power transistors BD241A BD241C
NPN power transistors
Features
■ NPN transistors
Applications
■ Audio, general purpose switching and amplifier transistors
Description
The devices are manufactured in Planar technology with |
STMicroelectronics |
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BD241C | NPN Epitaxial Silicon Transistor BD241/A/B/C
BD241/A/B/C
Medium Power Linear and Switching Applications
• Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter
1
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Rati |
Fairchild Semiconductor |
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BD241C | Complementary Silicon Plastic Power Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD241C/D
Complementary Silicon Plastic Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Coll |
Motorola Inc |
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BD241C | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeter |
RECTRON |
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BD241C | NPN SILICON POWER TRANSISTORS BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS
● Designed for Complementary Use with the BD242 Series
● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collect |
Bourns |
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