BD237 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD237/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

BD235 BD237 Low voltage NPN power transistors Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications Description The devices are manufactured in

BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Max

: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package Intended

NPN Epitaxial Planar Transistors P b Lead(Pb)-Free BD233/235/237 1. EMITTER 2. COLLECTOR 3. BASE 1 23 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol Collector-Emitter Voltage VCBO Collector

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust dev